Part Image

IRFU5305PBF - Infineon

Description: MOSFET P-Channel 55V 31A IPAK Infineon IRFU5305PBF P-channel MOSFET Transistor, 31 A, 55 V, 3-Pin IPAK

Download IRFU5305PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFU5305PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPAK (TO-251AA)
click to zoom
3D Models
IRFU5305PBF - Infineon  - 3D model - Transistor Outline, Vertical - IPAK (TO-251AA)
click to zoom

IRFU5305PBF Details

  • Manufacturer Part Number:

    IRFU5305PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    280 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    69 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFU5305PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFU5305PBF is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the layout compact, and use shielding and filtering components as needed.
  • Yes, the IRFU5305PBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching characteristics, gate drive requirements, and PCB layout to ensure reliable operation.
  • To protect the device, use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, such as zener diodes, TVS diodes, and current-sensing resistors, and ensure that the device is operated within its specified ratings.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFU5305PBF Overview

Use the download button to access the IRFU5305PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFU5, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFU5305PBF

Showing 0 results

IRFU5305PBF Alternates

Showing results

Image Part Number Model
Part Image IRFU5305 Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image IRFU5305PBF International Rectifier

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image AUIRFU5305 International Rectifier

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image AUIRFU5305 Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA