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IRFZ20PBF-BE3 - Vishay

Description: MOSFET N-CH 50V 15A TO220AB

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PCB Footprints
IRFZ20PBF-BE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to-220
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3D Models
IRFZ20PBF-BE3 - Vishay  - 3D model - Transistor Outline, Vertical - to-220
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IRFZ20PBF-BE3 Details

  • Manufacturer Part Number:

    IRFZ20PBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    100 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    120 ns

IRFZ20PBF-BE3 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFZ20PBF-BE3 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
  • Thermal management is critical for the IRFZ20PBF-BE3. Ensure good heat sinking by mounting the device on a heat sink with a thermal resistance of less than 1°C/W. Also, keep the ambient temperature below 50°C and avoid high-power operation for extended periods. Monitor the junction temperature (Tj) and ensure it stays below the maximum rated value of 150°C.
  • The recommended gate drive voltage for the IRFZ20PBF-BE3 is between 10V and 15V. This ensures reliable switching and minimizes power losses. However, the exact gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the IRFZ20PBF-BE3 is suitable for high-frequency switching applications up to 100 kHz. However, be aware of the device's switching losses, which increase with frequency. Ensure proper gate drive and layout to minimize parasitic inductances and capacitances that can affect high-frequency performance.
  • To protect the IRFZ20PBF-BE3 from overvoltage and overcurrent, use a suitable voltage regulator or overvoltage protection circuit. Also, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Ensure the protection circuitry can respond quickly enough to prevent damage to the MOSFET.

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IRFZ20PBF-BE3 Overview

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