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IRFZ34NPBF - Infineon

Description: N-channel MOSFET,IRFZ34N 26A 55V

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IRFZ34NPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRFZ34NPBF-1
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IRFZ34NPBF - Infineon  - 3D model - Transistor Outline, Vertical - IRFZ34NPBF-1
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IRFZ34NPBF Details

  • Manufacturer Part Number:

    IRFZ34NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.15

  • Avalanche Energy Rating (Eas):

    65 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    29 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    68 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFZ34NPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFZ34NPBF is -55°C to 175°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The maximum gate-source voltage that can be applied to the IRFZ34NPBF is ±20V.
  • Yes, the IRFZ34NPBF is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly cooled and the switching frequency is within the recommended range.
  • To protect the IRFZ34NPBF from ESD, handle the device by the body or use an anti-static wrist strap. Ensure that the workspace and equipment are also ESD-protected.

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Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image AUIRFZ34N Infineon Technologies AG

Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB