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IRFZ40 - Vishay

Description: MOSFET N-CH 60V 50A TO220AB

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IRFZ40 - Vishay - PCB symbol
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PCB Footprints
IRFZ40 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_2022-1
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3D Models
IRFZ40 - Vishay - 3D model - Transistor Outline, Vertical - TO-220AB_2022-1
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IRFZ40 Details

  • Manufacturer Part Number:

    IRFZ40

  • Rohs Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220, 3 PIN

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFZ40 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFZ40 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
  • The junction-to-case thermal resistance (RθJC) for the IRFZ40 is not directly provided in the datasheet. However, it can be calculated using the thermal resistance values provided in the datasheet. RθJC can be estimated as RθJC = RθJA - RθCS, where RθJA is the junction-to-ambient thermal resistance and RθCS is the case-to-sink thermal resistance.
  • The recommended gate drive voltage for the IRFZ40 is not explicitly stated in the datasheet. However, as a general rule, it's recommended to use a gate drive voltage between 10V to 15V to ensure reliable switching and minimize power losses.
  • The IRFZ40 is a general-purpose MOSFET, and its high-frequency performance is not explicitly stated in the datasheet. However, based on its switching characteristics, it's suitable for switching frequencies up to 100 kHz. For higher frequencies, it's recommended to use a MOSFET specifically designed for high-frequency applications.
  • The IRFZ40's parasitic capacitances, such as the gate-to-source capacitance (Cgs) and gate-to-drain capacitance (Cgd), can affect the device's switching performance. To handle these capacitances, it's recommended to use a gate driver with a low output impedance and to minimize the PCB trace lengths and parasitic inductances.

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IRFZ40 Overview

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