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IRFZ44ESPBF - Infineon

Description: MOSFET N-CH 60V 48A D2PAK

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IRFZ44ESPBF - Infineon - PCB symbol
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IRFZ44ESPBF - Infineon PCB footprint - Other - Other - D2PAK_ffw
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IRFZ44ESPBF Details

  • Manufacturer Part Number:

    IRFZ44ESPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    48 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    192 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFZ44ESPBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFZ44ESPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. According to Infineon, the SOA for the IRFZ44ESPBF is limited by the maximum drain-source voltage (Vds) of 55V, maximum drain current (Id) of 49A, and maximum power dissipation (Pd) of 94W.
  • To ensure proper cooling, it is recommended to attach a heat sink to the device, especially in high-power applications. The heat sink should be designed to provide a thermal resistance (Rth) of less than 10°C/W. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material (TIM) and follow proper mounting and assembly procedures.
  • The recommended gate drive voltage for the IRFZ44ESPBF is typically between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It is recommended to consult the datasheet and application notes for more information.
  • Yes, the IRFZ44ESPBF is suitable for high-frequency switching applications up to several hundred kHz. However, it is essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is designed to minimize switching losses and ringing.
  • To protect the IRFZ44ESPBF from electrostatic discharge (ESD), it is recommended to follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, ensure that the device is properly grounded during assembly and testing, and consider using ESD protection devices or circuits in the application.

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IRFZ44ESPBF Overview

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