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IRFZ44PBF - Vishay

Description: Trans MOSFET N-CH 60V 50A

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IRFZ44PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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3D Models
IRFZ44PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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IRFZ44PBF Details

  • Manufacturer Part Number:

    IRFZ44PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFZ44PBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFZ44PBF is typically defined by the manufacturer as the region where the device can operate safely without damage. For the IRFZ44PBF, the SOA is typically limited by the maximum voltage and current ratings, as well as the thermal limitations of the device. Consult the datasheet and application notes for more information.
  • To ensure proper thermal management of the IRFZ44PBF, it is essential to provide adequate heat sinking and cooling. This can be achieved by using a heat sink with a thermal interface material (TIM) and ensuring good airflow around the device. The maximum junction temperature (Tj) rating of the device should not be exceeded. Consult the datasheet and application notes for more information on thermal management.
  • The recommended gate drive voltage for the IRFZ44PBF is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI). Consult the datasheet and application notes for more information.
  • To protect the IRFZ44PBF from overvoltage and overcurrent conditions, it is essential to use proper circuit protection devices such as voltage regulators, overvoltage protection (OVP) circuits, and current limiting resistors. Additionally, using a fuse or a circuit breaker can help prevent damage from overcurrent conditions. Consult the datasheet and application notes for more information.
  • The recommended PCB layout and routing for the IRFZ44PBF involves keeping the power traces short and wide, using a solid ground plane, and minimizing the loop area of the power circuit. Additionally, it is essential to keep the gate drive signal traces away from the power traces to minimize electromagnetic interference (EMI). Consult the datasheet and application notes for more information.

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IRFZ44PBF Overview

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Image Part Number Model
Part Image IRFZ44 Texas Instruments

50A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

Part Image IRFZ44 International Rectifier

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFZ44 Vishay Intertechnologies

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFZ44 Motorola Semiconductor Products

Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image IRFZ44 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 50A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRFZ44PBF, check out Findchips.com