AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
73 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
60 V
Drain Current-Max (ID):
57 A
Drain-source On Resistance-Max:
0.012 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
92 W
Pulsed Drain Current-Max (IDM):
230 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRFZ44VZSPBF Frequently Asked Questions (FAQs)
The maximum safe operating area (SOA) for the IRFZ44VZSPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. According to Infineon, the SOA for the IRFZ44VZSPBF is limited by the maximum drain-source voltage (Vds) of 55V, maximum drain current (Id) of 49A, and maximum power dissipation (Pd) of 94W.
To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or thermal tape, and ensuring good contact between the device and the heat sink or PCB. Additionally, the PCB should be designed to dissipate heat efficiently, and the device should be operated within its specified temperature range.
The recommended gate drive voltage for the IRFZ44VZSPBF is typically between 10V to 15V, with a maximum gate-source voltage (Vgs) of ±20V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
To protect the IRFZ44VZSPBF from electrostatic discharge (ESD), it's essential to handle the device by the body or use an ESD wrist strap or mat. The device should be stored in an ESD-safe environment, and all equipment and tools used during assembly should be ESD-safe. Additionally, the PCB should be designed with ESD protection in mind, and the device should be powered up and down slowly to prevent voltage spikes.
The maximum allowed dv/dt (rate of change of voltage) for the IRFZ44VZSPBF is typically specified as 10V/ns. Exceeding this limit can cause the device to malfunction or fail.
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IRFZ44VZSPBF Overview
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