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IRFZ44ZPBF - Infineon

Description: MOSFET N-Channel 55V 51A HEXFET TO220AB Infineon IRFZ44ZPBF N-channel MOSFET Transistor, 51 A, 55 V, 3-Pin TO-220AB

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PCB Footprints
IRFZ44ZPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_11
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3D Models
IRFZ44ZPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB_11
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IRFZ44ZPBF Details

  • Manufacturer Part Number:

    IRFZ44ZPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Qualification Status:

    Not Qualified

IRFZ44ZPBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFZ44ZPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. For the IRFZ44ZPBF, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id). Refer to the datasheet for specific SOA curves.
  • To ensure proper thermal management, ensure the device is mounted on a suitable heat sink with a thermal interface material (TIM) to reduce thermal resistance. The heat sink should be designed to dissipate the maximum expected power loss. Additionally, ensure good airflow around the device and heat sink to prevent thermal hotspots.
  • The recommended gate drive voltage for the IRFZ44ZPBF is typically between 10V to 15V, depending on the specific application requirements. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI).
  • To protect the IRFZ44ZPBF from overvoltage and overcurrent, consider using a voltage clamp or transient voltage suppressor (TVS) to limit voltage spikes. Additionally, use a current sense resistor and a fuse or circuit breaker to detect and respond to overcurrent conditions.
  • For optimal performance and reliability, follow good PCB layout and routing practices, such as: keep the gate drive signal traces short and away from noisy power traces; use a solid ground plane; and minimize inductance in the drain and source connections. Consult the datasheet and application notes for specific guidance.

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IRFZ44ZPBF Overview

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Part Image AUIRFZ44Z Infineon Technologies AG

Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB