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IRG4BC20SPBF - Infineon

Description: Infineon IRG4BC20SPBF IGBT, 19 A 600 V, 3-Pin TO-220AB

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Symbol
IRG4BC20SPBF - Infineon - PCB symbol
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PCB Footprints
IRG4BC20SPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_2024-2
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3D Models
IRG4BC20SPBF - Infineon - 3D model - Transistor Outline, Vertical - TO-220AB_2024-2
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IRG4BC20SPBF Details

  • Manufacturer Part Number:

    IRG4BC20SPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Date Of Intro:

    1997-03-11

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    19 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    1540 ns

  • Turn-on Time-Nom (ton):

    38 ns

IRG4BC20SPBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IRG4BC20SPBF is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 5°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate resistance for the IRG4BC20SPBF is between 10 ohms and 100 ohms. A lower gate resistance can improve switching speed, but may increase power losses.
  • Yes, the IRG4BC20SPBF is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the gate drive circuitry is designed to handle the high-frequency switching and that the device is properly cooled.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IRG4BC20SPBF Overview

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