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IRG4BC30KPBF - Infineon

Description: IGBT 600V 28A 100W TO220AB

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Symbol
IRG4BC30KPBF - Infineon - PCB symbol
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PCB Footprints
IRG4BC30KPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB
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3D Models
IRG4BC30KPBF - Infineon - 3D model - Transistor Outline, Vertical - TO-220AB
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IRG4BC30KPBF Details

  • Manufacturer Part Number:

    IRG4BC30KPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Date Of Intro:

    1998-01-01

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    28 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    170 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    380 ns

  • Turn-on Time-Nom (ton):

    54 ns

IRG4BC30KPBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the IRG4BC30KPBF is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling of the IRG4BC30KPBF is crucial to prevent overheating. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a sufficient thermal conductivity. Additionally, consider using a thermal interface material to fill any gaps between the device and the heat sink.
  • The recommended gate drive voltage for the IRG4BC30KPBF is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions. Consult the datasheet and application notes for more information.
  • Yes, the IRG4BC30KPBF is suitable for high-frequency switching applications up to 100 kHz. However, the device's performance and reliability may be affected by high-frequency operation. Consult the datasheet and application notes for more information on high-frequency operation.
  • To protect the IRG4BC30KPBF from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuit. Additionally, consider using a gate drive circuit with built-in overvoltage protection and undervoltage lockout.

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IRG4BC30KPBF Overview

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