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IRG4PH40UPBF - Infineon

Description: IGBT, 1200V, 30A, TO-247AC

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IRG4PH40UPBF - Infineon - PCB symbol
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IRG4PH40UPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRG4PH40UPBF*
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IRG4PH40UPBF - Infineon - 3D model - Transistor Outline, Vertical - IRG4PH40UPBF*
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IRG4PH40UPBF Details

  • Manufacturer Part Number:

    IRG4PH40UPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Similar Group:

    TR0310021051

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    41 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    190 ns

  • Gate-Emitter Thr Voltage-Max:

    3 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    690 ns

  • Turn-on Time-Nom (ton):

    49 ns

IRG4PH40UPBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the IRG4PH40UPBF can withstand is 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate resistance for the IRG4PH40UPBF is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IRG4PH40UPBF is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal management, and layout considerations to ensure reliable operation.
  • To protect the IRG4PH40UPBF from ESD, it's essential to follow proper handling and storage procedures, such as using ESD-safe materials, grounding straps, and ionizers, and ensuring that the device is properly packaged and stored.

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IRG4PH40UPBF Overview

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About Infineon

Infineon Technologies develops semiconductor products for power conversion, control, sensing, connectivity, and security. Its portfolio includes power transistors, gate drivers, microcontrollers, sensors, communication devices, and supporting software. Power semiconductor technologies span silicon, silicon carbide, and gallium nitride, providing options for different switching, voltage, and efficiency requirements.

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