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IRG7PH46UD-EP - Infineon

Description: Trans IGBT Chip N-CH 1200V 108A 390000mW 3-Pin(3+Tab) TO-247AD Tube

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PCB Footprints
IRG7PH46UD-EP - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AD-1
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3D Models
IRG7PH46UD-EP - Infineon  - 3D model - Transistor Outline, Vertical - TO-247AD-1
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IRG7PH46UD-EP Details

  • Manufacturer Part Number:

    IRG7PH46UD-EP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    108 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    60 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    30 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    390 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    60 ns

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    680 ns

  • Turn-on Time-Nom (ton):

    80 ns

IRG7PH46UD-EP Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN-1123, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a suitable propagation delay and rise/fall time to ensure proper switching.
  • The maximum allowed overcurrent is typically 2-3 times the rated current. To protect the module, use a fast-acting fuse or a current sensor with a shutdown circuit to detect overcurrent conditions and disconnect the power supply.
  • Ensure good thermal contact between the module and the heat sink, and use a heat sink with a thermal resistance of ≤ 0.5 K/W. Also, consider using a fan or other forced-air cooling method to improve heat dissipation.
  • Store the module in a dry, cool place, away from direct sunlight and moisture. Handle the module by the edges, avoiding touching the pins or electrical components. Use an anti-static wrist strap or mat when handling the module to prevent ESD damage.

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