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IRGB30B60KPBF - Infineon

Description: Infineon IRGB30B60KPBF IGBT, 78 A 600 V, 3-Pin TO-220AB

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PCB Footprints
IRGB30B60KPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB PACKAGEOUTLINE
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3D Models
IRGB30B60KPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB PACKAGEOUTLINE
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IRGB30B60KPBF Details

  • Manufacturer Part Number:

    IRGB30B60KPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    75 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    42 ns

  • Gate-Emitter Thr Voltage-Max:

    5.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    370 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    39 ns

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    237 ns

  • Turn-on Time-Nom (ton):

    74 ns

IRGB30B60KPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRGB30B60KPBF is -40°C to 150°C.
  • To ensure reliability, follow the recommended PCB layout and thermal management guidelines, and ensure proper cooling and heat dissipation.
  • The recommended gate resistor value for the IRGB30B60KPBF is typically between 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IRGB30B60KPBF can be used in a parallel configuration to increase current handling, but ensure proper synchronization and thermal management to avoid uneven current sharing.
  • Use a suitable overvoltage protection circuit and overcurrent protection mechanism, such as a fuse or current limiter, to protect the IRGB30B60KPBF from damage.

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Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-220AB