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IRGP50B60PD1 - Infineon

Description: IGBT Transistors 600V Warp2 150kHz

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PCB Footprints
IRGP50B60PD1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to-247ac
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3D Models
IRGP50B60PD1 - Infineon  - 3D model - Transistor Outline, Vertical - to-247ac
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IRGP50B60PD1 Details

  • Manufacturer Part Number:

    IRGP50B60PD1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY, LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    75 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    161 ns

  • Turn-on Time-Nom (ton):

    39 ns

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IRGP50B60PD1 Overview

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IRGP50B60PD1 Alternates

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Part Image IRGP50B60PD1 International Rectifier

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC

Part Image IRGP50B60PD1PBF Infineon Technologies AG

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC

Part Image IRGP50B60PD1-E International Rectifier

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD

Part Image IRGP50B60PD1-EPBF International Rectifier

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD

Part Image IRGP50B60PD1-EP Infineon Technologies AG

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD

For a full list of alternate parts for IRGP50B60PD1, check out Findchips.com