IRHNKC9A97130 - Infineon

IRHNKC9A97130 Details

• Manufacturer Part Number:

  IRHNKC9A97130

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  6

• Avalanche Energy Rating (Eas):

  810 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  24 A

• Drain-source On Resistance-Max:

  0.072 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  14 pF

• JESD-30 Code:

  R-CBCC-N3

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  CERAMIC, METAL-SEALED COFIRED

• Package Shape:

  RECTANGULAR

• Package Style:

  CHIP CARRIER

• Peak Reflow Temperature (Cel):

  NOT SPECIFIED

• Polarity/Channel Type:

  P-CHANNEL

• Power Dissipation-Max (Abs):

  75 W

• Pulsed Drain Current-Max (IDM):

  96 A

• Reference Standard:

  MIL-STD-750; RH - 100K Rad(Si)

• Surface Mount:

  YES

• Terminal Form:

  NO LEAD

• Terminal Position:

  BOTTOM

• Time@Peak Reflow Temperature-Max (s):

  NOT SPECIFIED

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  113 ns

• Turn-on Time-Max (ton):

  66 ns