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IRL2910PBF - Infineon

Description: IRL2910PBF N-Channel MOSFET, 55 A, 100 V HEXFET, 3-Pin TO-220AB Infineon

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PCB Footprints
IRL2910PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-pin to-220ab
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3D Models
IRL2910PBF - Infineon  - 3D model - Transistor Outline, Vertical - 3-pin to-220ab
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IRL2910PBF Details

  • Manufacturer Part Number:

    IRL2910PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    520 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    55 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    190 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL2910PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL2910PBF is -55°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • Use a multi-layer PCB with a solid ground plane, keep the device close to the heat sink, and use short, wide traces for the drain and source connections to minimize inductance.
  • Yes, the IRL2910PBF can be used in switching applications. Considerations include ensuring the device is operated within the recommended frequency range, using a suitable gate driver, and minimizing switching losses.
  • Use proper ESD handling procedures, such as wearing an ESD strap, using ESD-safe materials, and storing the devices in ESD-safe packaging.

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Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRL2910PBF International Rectifier

Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB