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IRL3103PBF - Infineon

Description: Infineon IRL3103PBF N-channel MOSFET, 64 A, 30 V IRL3103PbF, 3 + Tab-Pin TO-220AB

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IRL3103PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB PACKAGE_1
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3D Models
IRL3103PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB PACKAGE_1
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IRL3103PBF Details

  • Manufacturer Part Number:

    IRL3103PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY, AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    220 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL3103PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL3103PBF is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 1V and 30V.
  • To minimize parasitic inductance, use a compact PCB layout with short leads and a solid ground plane. Place the device close to the power source and use a Kelvin connection for the gate driver.
  • To protect the IRL3103PBF from ESD, handle the device with an anti-static wrist strap or mat, and use ESD-protected packaging and storage.
  • The recommended gate resistor value for the IRL3103PBF is between 10Ω and 100Ω, depending on the specific application and switching frequency.

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