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IRL3103STRLPBF - Infineon

Description: MOSFET, N-CH, 30V, 64A, TO-263AB

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IRL3103STRLPBF - Infineon PCB footprint - Other - Other - IRL3103STRLPBF-2
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IRL3103STRLPBF Details

  • Manufacturer Part Number:

    IRL3103STRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    D2PAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    130 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    110 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    94 W

  • Pulsed Drain Current-Max (IDM):

    220 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL3103STRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL3103STRLPBF is -55°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • The recommended gate drive voltage for the IRL3103STRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRL3103STRLPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.
  • The maximum allowable power dissipation for the IRL3103STRLPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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IRL3103STRLPBF Overview

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Part Image IRL3103SPBF Infineon Technologies AG

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Part Image IRL3103STRR International Rectifier

Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRL3103S Infineon Technologies AG

Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRL3103STRRPBF International Rectifier

Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRL3103SPBF International Rectifier

Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for IRL3103STRLPBF, check out Findchips.com