Part Image

IRL3705NSTRLPBF - Infineon

Description: N-Channel 55 V 89A (Tc) 3.8W (Ta), 170W (Tc) Surface Mount D2PAK

Download IRL3705NSTRLPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRL3705NSTRLPBF - Infineon PCB footprint - Other - Other - IRL3705NSTRLPBF-3
click to zoom

IRL3705NSTRLPBF Details

  • Manufacturer Part Number:

    IRL3705NSTRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    340 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    89 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    310 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL3705NSTRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL3705NSTRLPBF is -55°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • The recommended gate drive voltage for the IRL3705NSTRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRL3705NSTRLPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the device with ESD-protective equipment, use an ESD wrist strap, and ensure the device is stored in an ESD-protective package to prevent damage.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRL3705NSTRLPBF Overview

Use the download button to access the IRL3705NSTRLPBF schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like IRL37, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRL3705NSTRLPBF

Showing 0 results

IRL3705NSTRLPBF Alternates

Showing results

Image Part Number Model
Part Image IRL3705NSTRLPBF International Rectifier

Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRL3705NSTRR International Rectifier

Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRL3705NSPBF Infineon Technologies AG

Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRL3705NSTRRPBF International Rectifier

Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRL3705NSTRL International Rectifier

Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRL3705NSTRLPBF, check out Findchips.com