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IRL510 - Vishay

Description: N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB,250 pF @ 25 V,2V @ 250µA -55°C ~ 175°C (TJ)

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PCB Footprints
IRL510 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB (High Voltage)
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3D Models
IRL510 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220AB (High Voltage)
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IRL510 Details

  • Manufacturer Part Number:

    IRL510

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220AB, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.54 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL510 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRL510 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage/current ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
  • The junction-to-case thermal resistance (RθJC) for the IRL510 can be calculated using the thermal resistance values provided in the datasheet. RθJC is typically calculated as the sum of the junction-to-lead (RθJL) and lead-to-case (RθLC) thermal resistances. For the IRL510, RθJC ≈ RθJL + RθLC ≈ 1.5°C/W + 0.5°C/W = 2°C/W.
  • The recommended gate drive voltage for the IRL510 is typically between 4.5V and 10V, depending on the specific application and required switching speed. A higher gate drive voltage can result in faster switching times, but may also increase power consumption and EMI.
  • Yes, the IRL510 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is capable of providing a clean, high-frequency signal. Additionally, the PCB layout and component selection should be optimized to minimize parasitic inductances and capacitances.
  • To handle the IRL510's high peak current capability during switching transients, it's essential to ensure that the device is properly sized for the application, and that the PCB layout and component selection can handle the resulting current surges. This may involve using a suitable current sense resistor, a robust power supply, and adequate decoupling capacitors.

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IRL510 Overview

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