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IRL520NPBF - Infineon

Description: Infineon IRL520NPBF N-channel MOSFET, 10 A, 100 V LogicFET, 3-Pin TO-220AB

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IRL520NPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB PACKAGE-ren1
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3D Models
IRL520NPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB PACKAGE-ren1
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IRL520NPBF Details

  • Manufacturer Part Number:

    IRL520NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    85 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.22 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    35 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL520NPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL520NPBF is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink, ensuring good thermal contact between the device and the heat sink, and providing adequate airflow.
  • The recommended gate drive voltage for the IRL520NPBF is between 10V and 15V.
  • Yes, the IRL520NPBF is suitable for high-frequency applications up to 1 MHz, but the user should ensure that the device is properly driven and the layout is optimized for high-frequency operation.
  • To protect the IRL520NPBF from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.

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Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB