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IRL530 - Vishay

Description: MOSFET RECOMMENDED ALT 844-IRL530PBF

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PCB Footprints
IRL530 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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3D Models
IRL530 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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IRL530 Details

  • Manufacturer Part Number:

    IRL530

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220AB, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    290 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    88 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL530 Frequently Asked Questions (FAQs)

  • The SOA for the IRL530 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (TJ) and voltage ratings. For the IRL530, the maximum TJ is 150°C, and the maximum voltage rating is 100V. Engineers should consult the datasheet and application notes for more information on SOA calculations.
  • The VGS for the IRL530 can be calculated using the device's threshold voltage (VTH) and the desired operating point. The VTH for the IRL530 is typically around 2-4V. To calculate VGS, engineers can use the following formula: VGS = VTH + (ID * RDS(on)) / (gm * (1 - (RDS(on) / RDSON))), where ID is the drain current, RDS(on) is the on-state resistance, gm is the transconductance, and RDSON is the drain-source on-state resistance.
  • The recommended gate drive voltage for the IRL530 is typically between 5-10V. However, the optimal gate drive voltage depends on the specific application, operating frequency, and desired switching performance. Engineers should consult the datasheet and application notes for more information on gate drive voltage selection.
  • Thermal management is critical for the IRL530, as excessive junction temperatures can lead to device failure. Engineers should ensure proper heat sinking, use thermal interface materials (TIMs) if necessary, and follow recommended PCB layout guidelines to minimize thermal resistance. The datasheet provides thermal resistance values (RθJA and RθJC) that can be used to estimate the device's junction temperature.
  • The IRL530 has an ESD rating of 2kV (human body model) and 150V (machine model). Engineers should ensure that their design includes adequate ESD protection measures, such as TVS diodes or ESD protection circuits, to prevent damage to the device during handling, assembly, and operation.

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IRL530 Overview

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Part Image IRL530 Samsung Semiconductor

Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRL530 Texas Instruments

15A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

Part Image IRL530 National Semiconductor Corporation

Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRL530 International Rectifier

Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRL530 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRL530, check out Findchips.com