Part Image

IRL60SL216 - Infineon

Description: MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg

Download IRL60SL216 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRL60SL216 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-262_1
click to zoom
3D Models
IRL60SL216 - Infineon  - 3D model - Transistor Outline, Vertical - TO-262_1
click to zoom

IRL60SL216 Details

  • Manufacturer Part Number:

    IRL60SL216

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-262, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1045 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    195 A

  • Drain-source On Resistance-Max:

    0.00195 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    890 pF

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    780 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL60SL216 Frequently Asked Questions (FAQs)

  • Infineon recommends a PCB layout with a large copper area connected to the drain pin (pin 3) to dissipate heat efficiently. A minimum of 1 oz copper thickness and a thermal via under the device are also recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including a proper heat sink design, and to monitor the device's junction temperature (Tj) to prevent overheating.
  • Although the datasheet specifies a maximum Vds of 60V, Infineon recommends limiting voltage spikes to 10% above the maximum rated voltage (66V) to prevent damage to the device.
  • Yes, the IRL60SL216 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to minimize parasitic inductances and ensure reliable operation.
  • To protect the IRL60SL216 from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the application, such as TVS diodes or ESD protection arrays.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRL60SL216 Overview

Use the download button to access the IRL60SL216 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRL60, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRL60SL216

Showing 0 results