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IRL80HS120 - Infineon

Description: MOSFET N-CH 80V 12.5A 6PQFN

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Symbol
IRL80HS120 - Infineon - PCB symbol
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PCB Footprints
IRL80HS120 - Infineon PCB footprint - Other - Other - PQFN 2 mm x 2 mm
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3D Models
IRL80HS120 - Infineon - 3D model - Other - PQFN 2 mm x 2 mm
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IRL80HS120 Details

  • Manufacturer Part Number:

    IRL80HS120

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    22 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    10.2 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JESD-30 Code:

    S-PDSO-N6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.5 W

  • Power Dissipation-Max (Abs):

    11.5 W

  • Pulsed Drain Current-Max (IDM):

    41 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL80HS120 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the IRL80HS120 can withstand is 175°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via to dissipate heat efficiently.
  • The recommended gate drive voltage for the IRL80HS120 is between 10V and 15V. However, it's essential to ensure that the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the IRL80HS120 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses and ensure that the PCB layout is optimized for high-frequency operation.
  • To protect the IRL80HS120 from overvoltage and overcurrent, it's recommended to use a voltage clamp circuit and a current sense resistor. Additionally, a fuse or a circuit breaker can be used to protect the device from overcurrent conditions.

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IRL80HS120 Overview

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