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IRLB4132PBF - Infineon

Description: MOSFET TRENCH <= 40V HEXFET Power MOSFET TO-220AB

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PCB Footprints
IRLB4132PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 AB
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IRLB4132PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220 AB
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IRLB4132PBF Details

  • Manufacturer Part Number:

    IRLB4132PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    310 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    78 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    440 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    620 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLB4132PBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the IRLB4132PBF can withstand is 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRLB4132PBF is between 10V and 15V, with a maximum of 20V.
  • Yes, the IRLB4132PBF is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses and thermal performance.
  • To protect the IRLB4132PBF, use overvoltage protection devices such as TVS diodes or zener diodes, and implement overcurrent protection using fuses or current-sensing resistors.

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