Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IRLI540N - Infineon

Description: N-isolated MOSFET,IRLI540N 20A 100V

Download IRLI540N Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IRLI540N - Infineon - PCB symbol
click to zoom
PCB Footprints
IRLI540N - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 Full-Pak_1
click to zoom
3D Models
IRLI540N - Infineon - 3D model - Transistor Outline, Vertical - TO-220 Full-Pak_1
click to zoom

IRLI540N Details

  • Manufacturer Part Number:

    IRLI540N

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220, FULL PACK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    310 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    23 A

  • Drain-source On Resistance-Max:

    0.053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLI540N Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IRLI540N is 150°C. However, it's recommended to operate it at a lower temperature to ensure reliability and longevity.
  • Yes, the IRLI540N is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the gate drive requirements, layout, and PCB design to minimize losses and ensure reliable operation.
  • To ensure proper cooling, you should provide a sufficient heat sink, consider the thermal resistance of the package, and ensure good thermal contact between the device and the heat sink. You can also use thermal interface materials to improve heat transfer.
  • The recommended gate drive voltage for the IRLI540N is between 10 V and 15 V. However, you can use a lower voltage if you're operating at a lower frequency or with a lower current. It's essential to ensure the gate drive voltage is sufficient to fully enhance the device.
  • Yes, you can use multiple IRLI540N devices in parallel to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRLI540N Overview

Use the download button to access the IRLI540N schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRLI5, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRLI540N

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

IRLI540N Alternates

Showing results

Image Part Number Model
Part Image IRLI540NPBF International Rectifier

Power Field-Effect Transistor, 23A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image IRLI540NPBF Infineon Technologies AG

Power Field-Effect Transistor, 23A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB