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IRLIZ34N - Infineon

Description: N-Channel 55 V 22A (Tc) 37W (Tc) Through Hole PG-TO220-FP

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PCB Footprints
IRLIZ34N - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 Full-Pak
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3D Models
IRLIZ34N - Infineon  - 3D model - Transistor Outline, Vertical - TO-220 Full-Pak
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IRLIZ34N Details

  • Manufacturer Part Number:

    IRLIZ34N

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220, FULL PACK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLIZ34N Frequently Asked Questions (FAQs)

  • Infineon recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • To ensure reliable operation, Infineon recommends following the recommended operating conditions, using a suitable heat sink, and implementing thermal management techniques such as thermal interface materials and airflow.
  • According to Infineon, the maximum allowed voltage transient on VGS is ±20V, but it's recommended to limit it to ±10V to ensure reliable operation and prevent damage to the device.
  • Yes, the IRLIZ34N is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching characteristics, gate drive requirements, and PCB layout to minimize losses and ensure reliable operation.
  • The gate resistor value depends on the specific application, gate drive voltage, and switching frequency. As a general guideline, Infineon recommends a gate resistor value between 10 Ω to 100 Ω, but it's essential to consult the application note and perform simulations to determine the optimal value.

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IRLIZ34N Overview

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Part Image IRLIZ34NPBF International Rectifier

Power Field-Effect Transistor, 22A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRLIZ34N International Rectifier

Power Field-Effect Transistor, 22A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRLIZ34NPBF Infineon Technologies AG

Power Field-Effect Transistor, 22A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB