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IRLL2703TRPBF - Infineon

Description: INFINEON - IRLL2703TRPBF - MOSFET, N-CH, 30V, 5.5A, SOT-223

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PCB Footprints
IRLL2703TRPBF - Infineon PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 (TO-261AA)
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3D Models
IRLL2703TRPBF - Infineon  - 3D model - SOT223 (3-Pin) - SOT-223 (TO-261AA)
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IRLL2703TRPBF Details

  • Manufacturer Part Number:

    IRLL2703TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOT-223, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    95 pF

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLL2703TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLL2703TRPBF is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • For optimal performance, it's recommended to follow Infineon's guidelines for PCB layout, including using a solid ground plane, minimizing trace lengths, and using a low-ESR capacitor for decoupling.
  • To prevent ESD damage, it's essential to follow proper handling and storage procedures, such as using ESD-safe materials, grounding oneself before handling the device, and using ESD protection devices in the circuit.
  • For optimal soldering and rework, it's recommended to follow Infineon's guidelines, including using a soldering temperature of 260°C (max), a soldering time of 10 seconds (max), and using a rework station with a temperature-controlled heat source.

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IRLL2703TRPBF Overview

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Part Image IRLL2703PBF International Rectifier

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRLL2703TRPBF International Rectifier

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRLL2703TR International Rectifier

Power Field-Effect Transistor, 5.5A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRLL2703 International Rectifier

Power Field-Effect Transistor, 5.5A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRLL2703 Infineon Technologies AG

Power Field-Effect Transistor, 5.5A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

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