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IRLML5103TRPBF - Infineon

Description: Infineon IRLML5103TRPBF P-Channel MOSFET, 760 mA, 30 V HEXFET, 3-Pin SOT-23

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PCB Footprints
IRLML5103TRPBF - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23/TO-236AB)
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3D Models
IRLML5103TRPBF - Infineon  - 3D model - SOT23 (3-Pin) - SOT-23/TO-236AB)
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IRLML5103TRPBF Details

  • Manufacturer Part Number:

    IRLML5103TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6.8

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    0.76 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.28 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLML5103TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLML5103TRPBF is -55°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • The recommended gate drive voltage for the IRLML5103TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRLML5103TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-protective environment.
  • The maximum allowable power dissipation for the IRLML5103TRPBF is 125W, but this value can be derated based on the operating temperature and other factors.

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IRLML5103TRPBF Overview

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Part Image IRLML5103GTRPBF Infineon Technologies AG

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Part Image IRLML5103GPBF Infineon Technologies AG

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Part Image MC3302 SANYO Electric Co Ltd

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