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Part Image

IRLML6401GTRPBF - Infineon

Description: Infineon IRLML6401GTRPBF P-channel MOSFET, 4.3 A, 12 V HEXFET, 3-Pin SOT-23

Download IRLML6401GTRPBF Model
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PCB Footprints
IRLML6401GTRPBF - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - Micro3 (SOT23)
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3D Models
IRLML6401GTRPBF - Infineon  - 3D model - SOT23 (3-Pin) - Micro3 (SOT23)
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IRLML6401GTRPBF Details

  • Manufacturer Part Number:

    IRLML6401GTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ,

  • Reach Compliance Code:

    compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • Risk Rank:

    8.53

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    33 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    125 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.3 W

  • Pulsed Drain Current-Max (IDM):

    34 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    460 ns

  • Turn-on Time-Max (ton):

    43 ns

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IRLML6401GTRPBF Overview

Use the download button to access the IRLML6401GTRPBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRLML, or try a keyword search, such as Power Field-Effect Transistors

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IRLML6401GTRPBF Alternates

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Image Part Number Model
Part Image IRLML6401PBF Infineon Technologies AG

Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

Part Image IRLML6401TRPBF Infineon Technologies AG

Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3

Part Image CDM6401 Continental Device India Ltd

Small Signal Field-Effect Transistor,

Part Image IRLML6401TR International Rectifier

Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3

Part Image IRLML6401 International Rectifier

Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3

For a full list of alternate parts for IRLML6401GTRPBF, check out Findchips.com