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IRLR3636TRPBF - Infineon

Description: HEXFET N-Ch MOSFET 99A 60V DPAK

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IRLR3636TRPBF - Infineon PCB footprint - Other - Other - PG-TO-252
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IRLR3636TRPBF Details

  • Manufacturer Part Number:

    IRLR3636TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0083 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    396 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLR3636TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLR3636TRPBF is -55°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • The recommended gate drive voltage for the IRLR3636TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRLR3636TRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the device with ESD-protective equipment, use an ESD-protected workstation, and follow proper handling and storage procedures to prevent ESD damage.

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IRLR3636TRPBF Overview

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