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IRLR6225TRPBF - Infineon

Description: International Rectifier IRLR6225TRPBF N-channel MOSFET Transistor, 100 A, 20 V, 3+Tab-Pin DPAK

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PCB Footprints
IRLR6225TRPBF - Infineon PCB footprint - Other - Other - IRFR2407TRPBF-2
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IRLR6225TRPBF - Infineon  - 3D model - Other - IRFR2407TRPBF-2
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IRLR6225TRPBF Details

  • Manufacturer Part Number:

    IRLR6225TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    63 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLR6225TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLR6225TRPBF is -55°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • Infineon provides a reference design and layout guidelines in the application note AN2013-01, which should be followed for optimal thermal performance and reliability.
  • Yes, the IRLR6225TRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and filtering to minimize EMI and ringing.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and consider using a fuse or PTC resettable fuse to prevent damage from excessive current.

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Part Image IRLR6225TRRPBF Infineon Technologies AG

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Part Image IRLR6225PBF Infineon Technologies AG

Power Field-Effect Transistor, 42A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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