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IRLR7843TRPBF - Infineon

Description: N-Channel 30 V 161A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)

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IRLR7843TRPBF - Infineon PCB footprint - Other - Other - TO-252AA (DPAK)
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IRLR7843TRPBF - Infineon  - 3D model - Other - TO-252AA (DPAK)
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IRLR7843TRPBF Details

  • Manufacturer Part Number:

    IRLR7843TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    1440 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    430 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    620 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLR7843TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLR7843TRPBF is -55°C to 150°C.
  • The recommended PCB footprint for the IRLR7843TRPBF is a 5x5mm QFN package with a 0.5mm pitch.
  • To ensure proper soldering, use a reflow soldering process with a peak temperature of 260°C for 10-30 seconds. Use a solder paste with a melting point of 217°C.
  • The maximum current rating for the IRLR7843TRPBF is 78A.
  • To protect the IRLR7843TRPBF from ESD, handle the device in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures.

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IRLR7843TRPBF Overview

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IRLR7843TRPBF Alternates

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Part Image IRLR7843TRPBF International Rectifier

Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRLR7843PBF International Rectifier

Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRLR7843TRLPBF Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRLR7843TR International Rectifier

Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRLR7843 Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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