Part Image

IRLS4030PBF - Infineon

Description: N-Channel 100 V 180A (Tc) 370W (Tc) Surface Mount D2PAK

Download IRLS4030PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRLS4030PBF - Infineon PCB footprint - Other - Other - IRLS4030PBF-1
click to zoom

IRLS4030PBF Details

  • Manufacturer Part Number:

    IRLS4030PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    305 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.0043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    370 W

  • Pulsed Drain Current-Max (IDM):

    730 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLS4030PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLS4030PBF is -55°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended operating conditions.
  • The recommended gate drive voltage for the IRLS4030PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRLS4030PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Use a suitable overvoltage protection circuit and overcurrent protection devices, such as a TVS diode and a fuse, to protect the IRLS4030PBF from voltage and current surges.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRLS4030PBF Overview

Use the download button to access the IRLS4030PBF schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like IRLS4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRLS4030PBF

Showing 0 results

IRLS4030PBF Alternates

Showing results

Image Part Number Model
Part Image CSD19536KTT Texas Instruments

Power Field-Effect Transistor, 200A I(D), 100V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRLS4030TRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRLS4030TRLPBF International Rectifier

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRLS4030TRR International Rectifier

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRLS4030TRL Infineon Technologies AG

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRLS4030PBF, check out Findchips.com