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IRLU3915PBF - Infineon

Description: MOSFET N-CH 55V 30A IPAK

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IRLU3915PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I-PACK (TO-251AA)
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3D Models
IRLU3915PBF - Infineon  - 3D model - Transistor Outline, Vertical - I-PACK (TO-251AA)
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IRLU3915PBF Details

  • Manufacturer Part Number:

    IRLU3915PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    ULTRA LOW RESISTANCE, AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    74 pF

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    120 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLU3915PBF Frequently Asked Questions (FAQs)

  • Infineon recommends a 2-layer PCB with a thermal via array under the device to improve heat dissipation. A minimum of 10 thermal vias with a diameter of 0.3 mm is recommended.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement a thermal management system, such as a heat sink or fan, to maintain a safe operating temperature.
  • Infineon recommends a gate drive voltage of 10-15 V for optimal switching performance. However, the device can operate with a gate drive voltage as low as 5 V, but with reduced switching performance.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device. Infineon recommends using a voltage clamp or a zener diode for OVP and a current sense resistor for OCP.
  • Infineon recommends a dead time of at least 100 ns to minimize shoot-through current. However, the optimal dead time may vary depending on the specific application and switching frequency.

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Power Field-Effect Transistor, 30A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA