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IRLU8743PBF - Infineon

Description: International Rectifier IRLU8743PBF N-channel MOSFET Transistor, 160 A, 30 V, 3-Pin IPAK

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PCB Footprints
IRLU8743PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I-PAK(TO-251AA)
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IRLU8743PBF - Infineon  - 3D model - Transistor Outline, Vertical - I-PAK(TO-251AA)
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IRLU8743PBF Details

  • Manufacturer Part Number:

    IRLU8743PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    160 A

  • Drain-source On Resistance-Max:

    0.0031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    470 pF

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    135 W

  • Pulsed Drain Current-Max (IDM):

    640 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLU8743PBF Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Use a heat sink with a thermal resistance of ≤ 10°C/W, ensure good airflow, and consider using a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/mK.
  • The maximum allowed voltage transient is ± 50 V, with a duration of ≤ 100 ns. Exceeding this may cause damage to the device.
  • Yes, but ensure the switching frequency is ≤ 100 kHz, and the device is properly decoupled with a low-ESR capacitor (≤ 10 nF) to minimize ringing and oscillations.
  • Use an ESD protection device (e.g., TVS diode) with a voltage rating ≥ 15 V, and ensure the device is handled and stored in an ESD-safe environment.

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