Part Image

IRLU9343PBF - Infineon

Description: MOSFET P-Channel 55V 20A IPAK Infineon IRLU9343PBF P-channel MOSFET Transistor, 20 A, 55 V, 3-Pin IPAK

Download IRLU9343PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRLU9343PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPAK (TO-251AA)
click to zoom
3D Models
IRLU9343PBF - Infineon  - 3D model - Transistor Outline, Vertical - IPAK (TO-251AA)
click to zoom

IRLU9343PBF Details

  • Manufacturer Part Number:

    IRLU9343PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    IPAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    72 pF

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    79 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IRLU9343PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLU9343PBF is -55°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • The recommended gate drive voltage for the IRLU9343PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRLU9343PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the device with ESD-protective equipment, use an ESD-protected workstation, and ensure proper grounding to prevent ESD damage.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRLU9343PBF Overview

Use the download button to access the IRLU9343PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRLU9, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRLU9343PBF

Showing 0 results

IRLU9343PBF Alternates

Showing results

Image Part Number Model
Part Image IRLU9343 International Rectifier

Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image IRLU9343 Infineon Technologies AG

Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA