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IRLZ34NPBF - Infineon

Description: IRLZ34NPBF N-Channel MOSFET, 30 A, 55 V HEXFET, 3-Pin TO-220AB Infineon

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IRLZ34NPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB 3pin
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3D Models
IRLZ34NPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB 3pin
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IRLZ34NPBF Details

  • Manufacturer Part Number:

    IRLZ34NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Mainland China, USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    94 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    68 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLZ34NPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLZ34NPBF is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 1V and 30V.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the power source. Avoid using vias or narrow traces near the MOSFET.
  • To protect the IRLZ34NPBF from ESD, use an ESD wrist strap or mat, and handle the device by the body or pins, not the leads. Store the device in an anti-static bag or container.
  • The recommended gate resistor value for the IRLZ34NPBF is between 10Ω and 100Ω, depending on the specific application and switching frequency.

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IRLZ34NPBF Overview

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