Part Image

ISC080N10NM6ATMA1 - Infineon

Description: N-Channel 100 V 13A (Ta), 75A (Tc) 3W (Ta), 100W (Tc) Surface Mount PG-TDSON-8 FL

Download ISC080N10NM6ATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
ISC080N10NM6ATMA1 - Infineon PCB footprint - Other - Other - ISC080N10NM6ATMA1
click to zoom
3D Models
ISC080N10NM6ATMA1 - Infineon  - 3D model - Other - ISC080N10NM6ATMA1
click to zoom

ISC080N10NM6ATMA1 Details

  • Manufacturer Part Number:

    ISC080N10NM6ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    185 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.00805 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ISC080N10NM6ATMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and pad design to ensure optimal thermal performance.
  • The ISC080N10NM6ATMA1 requires a specific biasing scheme to achieve optimal switching performance. Refer to the application note AN2013-04, which provides guidelines for biasing and gate drive design.
  • Infineon recommends following the soldering conditions outlined in their application note AN2013-05, which includes guidelines for temperature, time, and soldering techniques to ensure reliable assembly.
  • The ISC080N10NM6ATMA1 has internal ESD protection, but it's still important to follow proper handling and storage procedures to prevent ESD damage. Refer to Infineon's application note AN2013-06 for guidelines on ESD handling and protection.
  • The thermal impedance values for the ISC080N10NM6ATMA1 are not explicitly stated in the datasheet, but can be calculated using the thermal resistance values provided in the datasheet and the package dimensions. Alternatively, contact Infineon's technical support for more information.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

ISC080N10NM6ATMA1 Overview

Use the download button to access the ISC080N10NM6ATMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like ISC08, or try a keyword search, such as Power Field-Effect Transistors

Parts related to ISC080N10NM6ATMA1

Showing 0 results