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ISP25DP06LMSATMA1 - Infineon

Description: P-Channel 60 V 1.9A (Ta) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223 , 250mOhm , -55°C ~ 150°C (TJ)

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PCB Footprints
ISP25DP06LMSATMA1 - Infineon PCB footprint - Other - Other - PG-SOT223-3_2025
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ISP25DP06LMSATMA1 Details

  • Manufacturer Part Number:

    ISP25DP06LMSATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOT-223, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    257 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    1.7 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Pulsed Drain Current-Max (IDM):

    7.6 A

  • Reference Standard:

    IEC-68-1; IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

ISP25DP06LMSATMA1 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power consumption, use a heat sink, and ensure good airflow around the device. Additionally, the device should be operated within the recommended temperature range specified in the datasheet.
  • The recommended soldering conditions for this device are a peak temperature of 260°C, a soldering time of 10-30 seconds, and a soldering method that meets the requirements of IPC J-STD-020D.
  • The device should be stored in a dry, cool place, away from direct sunlight and moisture. During shipping, the device should be packaged in an electrostatic discharge (ESD) protective bag or wrap to prevent damage from static electricity.
  • The device should be stored in a dry, cool place with a relative humidity of 60% or less. The device should be handled in an environment with a relative humidity of 60% or less, and should not be exposed to moisture or condensation.

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ISP25DP06LMSATMA1 Overview

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Part Image ISP25DP06LMS Infineon Technologies AG

Power Field-Effect Transistor, 1.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET