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ISS55EP06LM - Infineon

Description: P-Channel 60 V 180mA (Ta) 400mW (Ta) Surface Mount PG-SOT23-3-5

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PCB Footprints
ISS55EP06LM - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - PG-SOT23_2023
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3D Models
ISS55EP06LM - Infineon  - 3D model - SOT23 (3-Pin) - PG-SOT23_2023
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ISS55EP06LM Details

  • Manufacturer Part Number:

    ISS55EP06LM

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    TR, 7 INCH : 3000

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.16 A

  • Drain-source On Resistance-Max:

    5.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.2 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    0.4 W

  • Power Dissipation-Max (Abs):

    0.4 W

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

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