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IXA12IF1200PB - LITTELFUSE

Description: IXYS SEMICONDUCTOR - IXA12IF1200PB - IGBT Single Transistor, 20 A, 2.1 V, 85 W, 1.2 kV, TO-220AB, 3 Pins

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PCB Footprints
IXA12IF1200PB - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXA12IF1200PB-
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3D Models
IXA12IF1200PB - LITTELFUSE  - 3D model - Transistor Outline, Vertical - IXA12IF1200PB-
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IXA12IF1200PB Details

  • Manufacturer Part Number:

    IXA12IF1200PB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    20 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    85 W

  • Reference Standard:

    IEC-60747

  • Surface Mount:

    NO

  • Terminal Finish:

    Pure Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    350 ns

  • Turn-on Time-Nom (ton):

    110 ns

  • VCEsat-Max:

    2.1 V

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IXA12IF1200PB Overview

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