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IXFA180N10T2 - LITTELFUSE

Description: Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK

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IXFA180N10T2 - LITTELFUSE PCB footprint - Other - Other - IXFA180N10T2
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IXFA180N10T2 - LITTELFUSE  - 3D model - Other - IXFA180N10T2
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IXFA180N10T2 Details

  • Manufacturer Part Number:

    IXFA180N10T2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.9

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    750 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    100 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    480 W

  • Pulsed Drain Current-Max (IDM):

    450 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFA180N10T2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFA180N10T2 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
  • While the IXFA180N10T2 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for 10-20 kHz switching frequencies, and operating it at higher frequencies may lead to reduced performance, increased losses, and potential reliability issues.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of ≤ 1°C/W and a surface finish that allows for good thermal contact. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow with other components or obstacles. You can also consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The maximum allowed voltage transient for the IXFA180N10T2 is ±5% of the rated voltage (1800V) for a duration of ≤ 1ms. Exceeding this limit may cause the device to fail or degrade over time. It's essential to ensure that the device is protected from voltage transients and spikes using suitable snubber circuits or voltage clamping devices.
  • Yes, you can use multiple IXFA180N10T2 devices in parallel to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent current imbalance and potential oscillations. Additionally, you should consider the increased thermal management requirements and ensure that the heat sink can handle the combined power dissipation.

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IXFA180N10T2 Overview

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