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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXFA22N65X2
- Part Number IXFA22N65X2
- Manufacturer LITTELFUSE
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Other
- Last Modified Date May 19, 2026 10:25 AM UTC
- Pinout / Pin List Click Here (Member Only)
IXFA22N65X2 Details
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Manufacturer Part Number:
IXFA22N65X2
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
6.7
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
1000 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
650 V
IXFA22N65X2 Frequently Asked Questions (FAQs)
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The recommended PCB footprint for IXFA22N65X2 is a standard TO-220 package with a minimum pad size of 70 mil x 70 mil and a thermal pad size of 120 mil x 120 mil.
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Yes, IXFA22N65X2 is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and fast switching times. However, it's essential to ensure proper gate drive and layout to minimize ringing and EMI.
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The junction-to-case thermal resistance (RθJC) for IXFA22N65X2 can be calculated using the formula: RθJC = (Tj - Tc) / Pd, where Tj is the junction temperature, Tc is the case temperature, and Pd is the power dissipation. The datasheet provides a thermal resistance value of 1.5°C/W, which can be used as a starting point for calculations.
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Yes, IXFA22N65X2 is compatible with lead-free soldering processes, including reflow and wave soldering. The device is RoHS compliant and meets the requirements of the European Union's Restriction of Hazardous Substances (RoHS) directive.
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The recommended gate drive voltage for IXFA22N65X2 is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V. A higher gate drive voltage can improve switching performance, but it's essential to ensure that the gate drive voltage does not exceed the maximum rating.
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IXFA22N65X2 Overview
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