Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IXFB110N60P3 - LITTELFUSE

Description: IXYS IXFB110N60P3 N-channel MOSFET Transistor, 110 A, 600 V, 3-Pin PLUS264

Download IXFB110N60P3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IXFB110N60P3 - LITTELFUSE - PCB symbol
click to zoom
PCB Footprints
IXFB110N60P3 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXFB110N60P3
click to zoom
3D Models
IXFB110N60P3 - LITTELFUSE - 3D model - Transistor Outline, Vertical - IXFB110N60P3
click to zoom

IXFB110N60P3 Details

  • Manufacturer Part Number:

    IXFB110N60P3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.18

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1890 W

  • Pulsed Drain Current-Max (IDM):

    275 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFB110N60P3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFB110N60P3 is a standard TO-220 package with a minimum pad size of 6.5mm x 4.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • Yes, the IXFB110N60P3 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of ≤ 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the airflow and ambient temperature in your design.
  • The maximum allowed voltage overshoot for the IXFB110N60P3 is 10% above the maximum rated voltage (600V) for a duration of ≤ 10µs.
  • Yes, you can parallel multiple IXFB110N60P3 devices, but it's crucial to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize current imbalance and oscillations.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IXFB110N60P3 Overview

Use the download button to access the IXFB110N60P3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFB1, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXFB110N60P3

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑