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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXFB30N120P
- Part Number IXFB30N120P
- Manufacturer LITTELFUSE
- Last Modified Date Aug 2, 2021 10:22 PM UTC
- Pinout / Pin List Click Here (Member Only)
IXFB30N120P Details
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Manufacturer Part Number:
IXFB30N120P
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
6
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
2000 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
1200 V
IXFB30N120P Frequently Asked Questions (FAQs)
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The maximum junction temperature for the IXFB30N120P is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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The thermal resistance of the IXFB30N120P can be calculated using the thermal resistance junction-to-case (RθJC) and thermal resistance junction-to-ambient (RθJA) values provided in the datasheet. The formula is: RθJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. RθJA can be calculated similarly, using the ambient temperature instead of case temperature.
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The recommended gate drive voltage for the IXFB30N120P is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
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Yes, the IXFB30N120P can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing. Additionally, the thermal management and PCB design should be carefully considered to ensure reliable operation.
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The maximum allowed dv/dt for the IXFB30N120P is 10kV/μs, as specified in the datasheet. Exceeding this value may cause the device to malfunction or fail.
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IXFB30N120P Overview
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