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IXFB82N60P - LITTELFUSE

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IXFB82N60P - LITTELFUSE  - 3D model
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IXFB82N60P Details

  • Manufacturer Part Number:

    IXFB82N60P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.18

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    82 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFB82N60P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFB82N60P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the maximum junction temperature (Tj) by 1°C per 1000 feet of altitude, and to use a suitable heat sink with a thermal resistance of less than 1°C/W.
  • The maximum allowed voltage transient for the IXFB82N60P is 600V, with a maximum duration of 10ms. Exceeding this limit may cause damage to the device.
  • Yes, the IXFB82N60P can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are matched in terms of their electrical characteristics and that the current sharing is balanced to avoid overheating.
  • The recommended gate drive voltage for the IXFB82N60P is between 10V and 15V, with a maximum gate current of 1A. A higher gate drive voltage may be required for high-frequency switching applications.

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IXFB82N60P Overview

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