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IXFH12N100F - LITTELFUSE

Description: Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD

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PCB Footprints
IXFH12N100F - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXFH)_2021--
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3D Models
IXFH12N100F - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 (IXFH)_2021--
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IXFH12N100F Details

  • Manufacturer Part Number:

    IXFH12N100F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    PLASTIC PACKAGE-3

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    1.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH12N100F Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH12N100F is a standard TO-220 package with a minimum pad size of 70 mils x 70 mils. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
  • The IXFH12N100F is rated for operation up to 150°C, but it's recommended to derate the device's current and voltage ratings at higher temperatures to ensure reliability and prevent thermal runaway. Consult the datasheet for specific derating guidelines.
  • Proper cooling is crucial for the IXFH12N100F. Ensure good airflow around the device, and consider using a heat sink with a thermal interface material (TIM) to improve heat transfer. The heat sink should be designed to keep the device's junction temperature below 150°C.
  • The recommended gate drive voltage for the IXFH12N100F is between 10V and 15V. A higher gate drive voltage can improve switching performance, but it may also increase power consumption and EMI emissions.
  • Yes, the IXFH12N100F can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing and potential oscillations.

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IXFH12N100F Overview

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