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IXFH140N10P - LITTELFUSE

Description: MOSFET 140 Amps 100V 0.011 Rds N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated

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PCB Footprints
IXFH140N10P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 AD
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3D Models
IXFH140N10P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 AD
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IXFH140N10P Details

  • Manufacturer Part Number:

    IXFH140N10P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    140 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH140N10P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFH140N10P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXFH140N10P is rated for operation up to 150°C junction temperature, but it's recommended to derate the power dissipation at higher temperatures to ensure reliable operation.
  • To ensure reliability in a high-vibration environment, it's recommended to use a secure mounting method, such as screwing or clipping, and to follow the recommended PCB layout and thermal management guidelines.
  • Yes, multiple IXFH140N10P devices can be paralleled to increase current handling, but it's recommended to ensure that the devices are matched in terms of electrical characteristics and that the PCB layout is designed to minimize current imbalance and thermal gradients.
  • The recommended gate drive voltage for IXFH140N10P is 10-15V, with a maximum gate-source voltage of 20V.

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