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IXFH150N30X3 - LITTELFUSE

Description: MOSFET DISCMSFT NCHULTRJNCTN X3CLASS

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PCB Footprints
IXFH150N30X3 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 Ad--1
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3D Models
IXFH150N30X3 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 Ad--1
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IXFH150N30X3 Details

  • Manufacturer Part Number:

    IXFH150N30X3

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    150 A

  • Drain-source On Resistance-Max:

    0.0083 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.7 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    890 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH150N30X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFH150N30X3 is a 5-pin TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a maximum pad size of 5.5mm x 4.5mm, with a 1.5mm hole for the heatsink.
  • Yes, IXFH150N30X3 is rated for operation up to 150°C, but it's recommended to derate the power dissipation at higher temperatures to ensure reliable operation. Consult the datasheet for thermal derating curves.
  • To ensure reliability in high-vibration environments, it's recommended to use a secure mounting method, such as screwing or clipping the device to the heatsink, and to follow proper PCB design and assembly practices to minimize mechanical stress.
  • Yes, multiple IXFH150N30X3 devices can be paralleled to increase current handling, but it's essential to ensure that the devices are properly matched and that the PCB design and thermal management are adequate to handle the increased power dissipation.
  • The recommended gate drive voltage for IXFH150N30X3 is 10-15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but may also increase power dissipation.

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IXFH150N30X3 Overview

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